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| SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type F05B23VR 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. OUTLINE DIMENSIONS Case : B-pack (Unit : mm) APPLICATION DC/DC converters Power supplies of DC 12-24V input Product related to Integrated Service Digital Network RATINGS Absolute Maximum Ratings Tc = 25 Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain CurrentDC ID IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC PT On alumina substrate, 50.8mm , substrate thickness 0.64t, Ta = 25 Total Power Dissipation Ratings Unit -55150 150 230 V 20 0.5 1 A 0.5 1.5 W 3.5 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VR Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forward Voltage ja Thermal Resistance jc Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss ton Turn-On Time toff Turn-Off Time Conditions ID = 250A, VGS = 0V VDS = 230V, VGS = 0V VGS = 20V, VDS = 0V ID = 0.5A, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.2mA, VDS = 10V IS = 0.5A, VGS = 0V junction to ambient, on alumina substrate junction to case VGS = 10V, ID = 0.5A, VDD = 200V VDS = 10V, VGS = 0V, f = 1MHZ ID = 0.5A, VGS = 10V, RL = 200 F05B23VR Min. 230 Typ. Max. 250 0.1 0.2 2 0.4 5.5 3 Unit V A 2.7 45 4.5 30 30 50 S 8 4 V 1.5 83.3 / 35.7 nC pF 60 100 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd F05B23VR 1 Transfer Characteristics Ta = -55C 25C 100C 0.8 Drain Current ID [A] 150C 0.6 0.4 0.2 VDS = 10V pulse test TYP 0 2 4 6 8 10 0 Gate-Source Voltage VGS [V] F05B23VR Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 0.5A 1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] F05B23VR 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 0.2mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] F05B23VR 1 Safe Operating Area 100s 200s 0.1 Drain Current ID [A] R DS(ON) limit 1ms 10ms 0.01 DC Ta = 25C Single Pulse Alumina substrate 0.001 1 10 100 230 Drain-Source Voltage VDS [V] F05B23VR 1 Safe Operating Area 100s 200s 0.1 Drain Current ID [A] R DS(ON) limit 1ms 10ms DC 0.01 Tc = 25C Single Pulse 0.001 1 10 100 230 Drain-Source Voltage VDS [V] F05B23VR Transient Thermal Impedance 1000 100 10 Transient Thermal Impedance ja [C/W] 1 Alumina substrate 50.8mm2 x 0.64mm 0.1 10-4 10-2 10-3 10-1 100 101 102 103 Time t [s] F05B23VR Transient Thermal Impedance 1000 100 10 Transient Thermal Impedance jc(t) [C/W] 1 0.1 10-4 10-2 10-3 10-1 100 101 102 103 Time t [s] F05B23VR 1000 Capacitance 100 Capacitance Ciss Coss Crss [pF] Ciss Coss 10 Crss 1 Tc=25C TYP 0.1 0 50 100 150 200 Drain-Source Voltage VDS [V] F05B23VR 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] F05B23VR 250 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] 15 VDD = 200V 100V 150 VGS 10 100 5 50 ID = 0.5A TYP 0 0 1 2 3 4 5 0 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 200 |
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